| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5463907 | Materials Letters | 2017 | 9 Pages |
Abstract
In this paper, we propose a new strategy for optimizing the conductivity of AZO (ZnO:Al) thin films as transparent conductive oxide (TCOs) based on adapting the atomic percentage of the dopant to the precursor sol concentration. A comparison between the electrical current of pure ZnO and AZO thin films indicated that, the increase in molar concentration of ZnO solution and percentage of Aluminum, respectively up to 1Â M and 2Â at.%, increased the charge carrier concentration continuously. But a little more increase in both of them actually decreased the conduction. Optical behavior of thin films showed blue shifts in the optical band gap that could be explained by the Burstein-Moss effect and Brus equation. The lattice stress and crystal size of thin films showed that Al+3 ions were properly localized in the ZnO structure prepared with 1Â M concentration at 2Â at.% Al.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Babak Efafi, Seyedeh Soraya Mousavi, Mohammad Hossein Majles Ara, Bijan Ghafari, Hamid Reza Mazandarani,