Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5463949 | Materials Letters | 2017 | 4 Pages |
Abstract
The transition metal-oxide thin films of WO3 have been prepared by thermal evaporation at a low deposition rate. The material characterization shows that the thin films have stoichiometric composition and the tungsten ions were fully oxidised into W6+. The surface of the WO3 thin films became smoother when the thickness increased. The results show that the deposition of WO3 thin film follows island growth. The flatband voltage of WO3/Si was extracted. The values on n-Si and p-Si were about 0.75Â eV and 0Â eV, respectively. It was also found that large amounts of negative charges were accumulated at the interface of WO3/n-Si because of electron transfer.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shenghao Li, Zhirong Yao, Jixiang Zhou, Rui Zhang, Hui Shen,