Temperature-stable dielectrics based on BaTiO3-BiMg2/3Ta1/3O3 ceramics

(1−x)BaTiO3-xBiMg2/3Ta1/3O3 (x = 0.3-0.6) ceramics were fabricated via conventional solid state sintering route. X-ray diffraction results showed single perovskite phase for x = 0.3-0.5 while secondary phase was formed for x = 0.6 sample. Raman data was consistent with XRD data indicating the formation of cubic structure. The samples exhibited flat relative permittivity over a wide temperature range. The insulation resistance was found to be 109-1012 Ω-cm and time constant 0.36-72.14 s. Impedance spectroscopy analysis of the samples indicated single Debye-like peak in the spectroscopic plot, indicative of homogeneous electrical microstructure. The temperature-stable dielectric properties suggested that this material may be useful for capacitor applications.