| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5464139 | Materials Letters | 2017 | 4 Pages |
Abstract
Zinc vacancy (VZn) plays key roles in the optical and electrical properties of ZnO, but its behaviors are not fully understood. Here we report the formation and abnormal photoluminescence (PL) of VZn-related complex in Zn+-implanted ZnO single crystals. With increasing excitation density, we observed a new and gradually increased broad emission around 550Â nm. The 550Â nm emission is unexpectedly invisible under low power level excitation, indicating the lower priority of recombination of the related defect centers. Electron paramagnetic resonance (EPR) results suggest the formation of VZn-Zni complex after implantation, which is responsible for the abnormal PL properties.
Related Topics
Physical Sciences and Engineering
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Nanotechnology
Authors
Shuoxing Li, Jing Li, Weitian Wang, Zhizhen Ye, Haiping He,