| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5464146 | Materials Letters | 2017 | 4 Pages |
Abstract
â¢Zn-doped CdS films were used as active layers in thin film transistors.â¢Lattice distortions and charge traps as consequence of the Zn doping.â¢Negative differential resistance effect due to low saturation mobility.
The performance of Thin Film Transistors (TFTs) with chemically deposited Zn-doped CdS active layers was assessed. Charge carrier traps, induced by structural distortions, were produced by the incorporation of Zn in CdS. This phenomenon was used to engineer the operation mode of these devices. The degradation of the saturation charge-carrier mobility affected the output characteristics of the TFTs, which interestingly exhibited the negative differential resistance (NDR) effect.
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Authors
Luis A. González, Iyali Carreón-Moncada, Manuel A. Quevedo-López,