| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5464578 | Surface and Coatings Technology | 2017 | 43 Pages |
Abstract
The activation energy for defect annihilation was estimated to be about 1Â eV and corresponds to the diffusion of interstitial atoms with the annihilation of vacancies. The concentration of free carriers increases due to the activation of the dopants that act as shallow donors.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Daniel Meljanac, Krunoslav JuraiÄ, Vilko MandiÄ, Hrvoje SkenderoviÄ, Sigrid Bernstorff, Jasper R. Plaisier, Ana Å antiÄ, Andreja GajoviÄ, Branko Å antiÄ, Davor Gracin,