Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5464643 | Surface and Coatings Technology | 2017 | 7 Pages |
Abstract
Metal-doped diamond-like carbon (Me-DLC) is a typical industrial solution for wear resistant coating due to their tribological properties. DLC doping with metal is used to reduce internal stress of the DLC coating, improve its thermal stability, hardness, coating-substrate adhesion, and wear resistance. Furthermore, application of the High Power Impulse Magnetron Sputtering (HiPIMS) for Me-DLC deposition allows improvement of coating adhesion and densification of the coating. To improve the properties of the DLC coatings doping with tungsten and molybdenum from a mixed W-Mo-C target can be used. This study concerns the plasma chemistry and composition for a W-Mo-C target operated with HIPIMS in argon atmosphere. For a HIPIMS discharge with a fixed pulse length of 150 μs a linear dependence of the average power and current are observed. The optical emission spectroscopy experiments reveal a temporal dependence of the plasma composition as the current pulse develops. First plasma is dominated by argon neutrals and ions followed by molybdenum and tungsten. Significant separation between the two metal species is observed in terms of the times of onset and peak of the emission. As a consequence of the change of the neutral gas to metal ratio the estimated effective electron temperature, Te, changes from ~ 2 eV as estimated from Ar I emission to ~ 0.3-0.6 eV as indicated by W I emission. A change of Te is also observed with the change of HIPIMS frequency: the Te estimated from metal excitations increases most probably as a result of the processes taking place in the afterglow phase between HIPIMS pulses. The transition from argon plasma at the beginning of the pulse to metal-rich plasma in the second phase of the pulse is discussed in comparison with the ion current measurements performed with a planar probe.
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Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
W. Gajewski, A.P. Ehiasarian, M. Żelechowski, P.Eh. Hovsepian,