Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5464781 | Surface and Coatings Technology | 2017 | 7 Pages |
Abstract
Stoichiometric Cu1.00In0.45Ga0.1Se2.26 thin films are obtained at â 1.8 V. There are characterized by reduction peaks at E(Cu) = 0.05 V(c1), E(Se) = â 0.43 V(c2), E(In) = â 1.1 V(c3) and E(Ga) = â 1.39 V(c4) suggesting that c1, c2, c3 and c4 are related to the reduction potentials for copper, selenium, indium and gallium reduction.117
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Shanshan Ji, Maozhong An, Peixia Yang, Jinqiu Zhang,