Article ID Journal Published Year Pages File Type
5464781 Surface and Coatings Technology 2017 7 Pages PDF
Abstract
Stoichiometric Cu1.00In0.45Ga0.1Se2.26 thin films are obtained at − 1.8 V. There are characterized by reduction peaks at E(Cu) = 0.05 V(c1), E(Se) = − 0.43 V(c2), E(In) = − 1.1 V(c3) and E(Ga) = − 1.39 V(c4) suggesting that c1, c2, c3 and c4 are related to the reduction potentials for copper, selenium, indium and gallium reduction.117
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Authors
, , , ,