| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5464953 | Surface and Coatings Technology | 2017 | 5 Pages |
Abstract
The ZnTe/Si p-i-n heterojunctions were fabricated successfully by using direct-current (DC) magnetron sputtering. The effects of an intrinsic ZnTe layer and annealing treatment on the properties of p-i-n heterojunctions were investigated. The results showed that the crystallinity of the ZnTe films was improved after annealing treatment. Structural analysis revealed that the ZnTe films were zinc blende and highly oriented along the (1 1 1) direction. The optical band-gap is 2.20Â eV and 2.25Â eV for p-ZnTe and i-ZnTe films. The heterojunction with an intrinsic layer and annealing treatment showed a good rectifying behavior.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kaifeng Qin, Lunjuan Li, Jian Huang, Ke Tang, Xiaotian Zhang, Meng Cao, Yue Shen, Linjun Wang,