| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5464988 | Surface and Coatings Technology | 2017 | 23 Pages |
Abstract
Polycrystalline CdZnTe films with thickness about 300 μm were deposited by close spaced-sublimation (CSS) method. The as-deposited CdZnTe samples were polished by mechanical polishing (MP) process. Cu-doped ZnTe films were sputtered by RF magnetron sputtering as an intermediate layer to improve the performance of Ohmic contact of Au electrodes to CdZnTe films. The effect of Cu-doped ZnTe intermediate layers on the electrical characteristics of Au/CdZnTe and Au/ZnTe:Cu/CdZnTe was investigated by the circular transmission line model (CTLM). The results indicate a good Ohmic contact of Au/ZnTe:Cu/CdZnTe with low contact resistivity of about 0.79 Ω·cm2.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kaifeng Qin, Huanhuan Ji, Jian Huang, Ke Tang, Yibin Shen, Xiaotian Zhang, Meng Cao, Jijun Zhang, Yue Shen, Linjun Wang,