Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465048 | Surface and Coatings Technology | 2017 | 42 Pages |
Abstract
A comparative study of thin titanium oxynitride (TiOxNy) films prepared by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium (TDMAT) and N2 plasma as well as titanium(IV)isopropoxide and NH3 plasma is reported. The comparison is based on the combination of Ti2p core level and valence band spectroscopy and current-voltage measurements. The TDMAT/N2 process delivers generally higher fractions of TiN and TiON within the Ti2p spectra of the films and stronger photoemissions within the bandgap as resolved in detail by high energy resolution synchrotron-based spectroscopy. In particular, it is shown that higher TiN contributions and in-gap emission intensities correlate strongly with increased leakage currents within the films and might be modified by the process parameters and precursor selection.
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Nanotechnology
Authors
MaÅgorzata Kot, Karsten Henkel, Chittaranjan Das, Simone Brizzi, Irina Kärkkänen, Jessica Schneidewind, Franziska Naumann, Hassan Gargouri, Dieter SchmeiÃer,