Article ID Journal Published Year Pages File Type
5465050 Surface and Coatings Technology 2017 6 Pages PDF
Abstract
Effects of nitridation condition on gallium-zinc oxynitride solid solution (GaN:ZnO) was investigated to optimize the composition of GaN:ZnO for dye-modified photocatalysts. Gallium nitride (GaN) formed from Ga2O3 at 973 K, and GaN:ZnO was obtained over 1073 K under NH3 gas flow. Nitrogen content in GaN:ZnO increased with increasing nitridation temperature and time, while zinc content decreased because of evaporation. Although UV-vis absorption spectra of GaN:ZnO powders were not significantly changed in different compositions, the water splitting activities of the dye-modified GaN:ZnO photocatalysts depended on the composition of GaN:ZnO. The highest formation rates of H2 and O2 were achieved by the GaN:ZnO containing 15% of zinc and 73% of nitrogen. Finally, the nitridation condition was optimized at 1123 K 15 h under NH3 gas flow (200 ml/min) for preparation of the dye-modified GaN:ZnO powder as water splitting photocatalyst.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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