Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465164 | Surface and Coatings Technology | 2016 | 4 Pages |
Abstract
In this work, we have investigated the thin film based field-effect transistor (FET) with interlinked ZnO tetrapod network (ITN-ZnO) used as an active channel layer. The ITN-ZnOs were synthesized by microwave assisted thermal oxidation technique. A ZnO FET with bottom gate structure was fabricated and investigated in terms of electrical properties. X-ray diffraction pattern revealed the wurtzite hexagonal structure of the ITN-ZnO. A drain current on/off ratio of 104, the off-state current as low as 10Â nA, the threshold voltage of 10Â V, field effect mobility of 7.939Â cm2/Vs and sub-threshold swing of 1.4Â V/decade were obtained. These results suggested that ITN-ZnO could be applied for FET, which could be operated in an enhancement mode.
Related Topics
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Nanotechnology
Authors
Witawat Ponhan, Meechai Thepnurat, Surachet Phadungdhitidhada, Duangmanee Wongratanaphisan, Supab Choopun,