Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465193 | Surface and Coatings Technology | 2016 | 4 Pages |
Abstract
Ion implantation is a key process technique for semiconductor materials, in particular silicon, for local tailoring of the semiconductor properties. The wide bandgap semiconductor silicon carbide (SiC) features outstanding material properties for high power and high temperature electronic devices, but the properties of SiC also make it difficult to manufacture and process the material. The development of implantation technology for SiC has therefore necessitated several changes from mainstream silicon implantation technology. This paper will discuss the difficulties with implantation of SiC for manufacturing of electronic devices and also describe how the problems have been overcome, for instance by implantation at elevated temperatures and using high temperature post-implant annealing.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Anders Hallén, Margareta Linnarsson,