| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5465334 | Surface and Coatings Technology | 2016 | 5 Pages |
Abstract
The p-CuS/n-GaN heterojunctions were fabricated successfully using RF magnetron sputtering. It was found that the properties of CuS films with annealing treatment were superior to non-annealed ones through various tests of SEM, XRD, Raman, EDS, and absorption spectrum. The optical band-gap slightly increased after annealing treatment. The current-voltage (I-V) characteristics of p-CuS/n-GaN heterojunction were measured and showed well-defined rectifying behavior for the annealed device.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lunjuan Li, Jian Huang, Weichuan Yang, Ke Tang, Bing Ren, Haitao Xu, Linjun Wang,