Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465352 | Surface and Coatings Technology | 2016 | 5 Pages |
Abstract
In this work, B and Ga co-doped ZnO (BGZO) films were fabricated by RF magnetron sputtering method. The effects of substrate temperature on the electrical, optical, structural and morphological properties of B and Ga co-doped ZnO films were investigated. XRD results revealed that deposited films were textured along c-axis and maintain wurtzite crystalline symmetry. As substrate temperature increased up to 200 °C, the film crystallinity was improved and the crystallite sizes became larger. At the substrate temperature of 200 °C, the films showed lower resistivity, higher Hall mobility and higher optical band gap. It was also observed that all films showed high transparency in the visible range (400-800 nm), which did not change obviously with the substrate temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Lei Zhang, Jian Huang, Jin Yang, Ke Tang, Bing Ren, Shuwei Zhang, Linjun Wang,