| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5465357 | Surface and Coatings Technology | 2016 | 4 Pages |
Abstract
In this work, Ar plasma etching was performed to polycrystalline CdZnTe thick films grown from close-spaced sublimation method. The effect of Ar plasma etching time on the microstructure, optical and photoelectric properties of CdZnTe films were investigated by using AFM, XRD, UV-visible spectrophotometer and current-voltage characterization system. The results showed that proper plasma etching time can significantly improve the surface roughness and passivate the CdZnTe film surface, leading to less surface leakage current and higher photo-response of the Au/CdZnTe/FTO photo-conductive structure. Its photo-response sensitivity under 281Â nm UV irradiation increases with one order of magnitude after 5Â min' etching.
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Authors
Yuelu Zhang, Jian Huang, Jijun Zhang, Qun Mou, Yue Shen, Linjun Wang,