Growth mechanism of indium nitride via sol-gel spin coating method and nitridation process

This work focuses on the growth mechanism of indium nitride (InN) thin films on aluminum nitride on p-type silicon(111) templates via sol-gel spin coating method and subsequent nitridation in ammonia ambient. The effects of nitridation duration on the structural properties, surface morphologies, and infrared (IR) reflectance response of the deposited thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and Fourier transform IR spectroscopy. The chemical routes describing the formation of InN thin films were discussed in detail. The complete conversion of indium oxide into InN can be achieved at 600 °C for 45 min, by which densely packed InN grains were formed. Results indicated that the proposed methodology promoted the growth of InN.