Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465754 | Thin Solid Films | 2017 | 34 Pages |
Abstract
In this work, we examine the effect of NH3 plasma post-treatment on the ultraviolet (UV) photo-response transient characteristics of zinc oxide (ZnO) nanorod (NR)-gated AlGaN/GaN high electron mobility transistor (HEMT) photodetectors. The recovery time of the detectors (180Â ms) was significantly reduced to 80Â ms by the NH3 plasma-treatment for 180Â s, while no significant reduction in response time upon UV illumination is measured from the plasma-treated devices. The photoluminescence and X-ray diffraction reveals that continuous improvement in crystalline quality of NRs is observed with the plasma duration up to 180Â s. The X-ray photoelectron spectroscopy measurement shows that the surface band bending of ZnO crystals is lowered with the corresponding plasma treatment.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Salahuddin Dogar, Waqar Khan, Fasihullah Khan, Sam-Dong Kim,