| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5465809 | Thin Solid Films | 2017 | 36 Pages |
Abstract
Resistance of meandered Ti/Pt resistors was found to decrease significantly above 500 °C and complies well with the microstructural rearrangements determined by AFM and AES analyses. It was further determined that by increasing the annealing temperature from 300 °C to 700 °C, a monotonic increase of temperature coefficient of resistance from 1400 ppm/°C to 2400 ppm/°C, respectively, was obtained. This represents a considerable improvement in sensitivity of Ti/Pt layers used as a temperature sensing devices. Resistance exhibited linear temperature dependency with nonlinearity better than 0.84%.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
D. Resnik, J. KovaÄ, D. VrtaÄnik, M. Godec, B. PeÄar, M. Možek,