Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465873 | Thin Solid Films | 2017 | 18 Pages |
Abstract
High-quality VO2 films have been successfully synthesized on SiO2/Si substrates by a simple and efficient method in a tube furnace. The as-synthesized VO2 films were structurally uniform and single-crystalline. These films show a large resistance change of more than four orders of magnitude with a 5Â K width of the hysteresis loop as the temperature is cycled through the phase transition. VO2 thin-film devices have been fabricated by reactive ion etching (RIE) and deposition processes. The current response of devices under light illumination and bias exhibited a higher sensitivity and a much wider pressure range than that without light illumination. Experimental data also revealed that the current response of a VO2 film device shows an approximately linear dependence on the logarithm of air pressure. These high-quality VO2 thin films with excellent properties have potentially promising application in vacuum sensor.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yi Bu, Jijun Zou, Yun Liu, Zhifu Zhu, Wenjuan Deng, Xincun Peng, Bin Tang,