Article ID Journal Published Year Pages File Type
5465904 Thin Solid Films 2017 42 Pages PDF
Abstract
This study investigated the correlations between the microstructure and electrical properties of regioregular poly(3-hexylthiophene) (rr-P3HT) blended with polystyrene, poly(vinyl phenol), or poly(methyl methacrylate) (PMMA) thin-film transistors (TFTs). Compared with pure rr-P3HT TFT, the blended rr-P3HT TFTs exhibited superior characteristics such as higher on/off current ratio of approximately 104, lower leakage current of < 10− 11 A, smaller sub-threshold swing of approximately 2.09 V/dec, and higher mobility of approximately 8.18 × 10− 3 cm2/Vs. The suppression of the leakage current of the sub-threshold and off regimes may be attributed to the enhanced oxygen/humidity resistance of blended rr-P3HT TFTs. The evaluation of the physical properties showed that polymer insulators positively contributed to the morphology, molecular orientation, and effective conjugated length of the rr-P3HT film, thereby enhancing the device characteristics. The hybrid Al2O3/PMMA gate insulator was also utilized to apply low-voltage TFTs with rr-P3HT/polymer blends and yielded a low operation voltage of − 2 V.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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