Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465914 | Thin Solid Films | 2017 | 4 Pages |
Abstract
Diffusion of Ag in Cu(In,Ga)Se2 was investigated utilizing radiotracer sputter-profiling of 110mAg. After removal of the CdS capping layer the 110mAg isotope was deposited on the front-surface of the Cu(In,Ga)Se2 layer and the samples were subjected to isothermal annealing in a temperature interval ranging from 573 K up to 648 K. The observed Ag diffusivity can be described by the following Arrhenius equation D(T) = 0.12  exp (â 1.29 eV/kBT) cm2/s . Comparison with the diffusivities of Zn, Cd and Fe in Cu(In,Ga)Se2 in the investigated temperature regime reveals similiar activation energies, but a larger pre-exponential factor for Ag diffusion resulting in accelerated diffusion kinetics.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Wegner, F. Wilangowski, R. Wuerz, N.A. Stolwijk,