Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465940 | Thin Solid Films | 2017 | 16 Pages |
Abstract
Low temperature post-deposition treatment of Cu2ZnSnSe4 with NaF and KF significantly improved the solar cell efficiency (from 6.4% to 7.8% and 7.7% on average, respectively) due to enhanced fill factor (from 0.58 to 0.61 and 0.62), open-circuit voltage (Voc) (from 314Â mV to 337Â mV and 325Â mV) and short-circuit current density (from 35.3Â mAâ
cm â2 to 38.3 mAâ
cm â2 and 38.6 mAâ
cm â2). Voc improvement was higher for solar cells with NaF treatment due to an increase in radiative efficiency at room temperature and shallower defect activation energy as determined by photoluminescence (PL) and temperature dependent admittance spectroscopy, respectively. In the case of KF treatment, red-shift of the PL, higher band tail density of state and donor activation energy deeper in the band gap were limiting further improvement of the Voc compared to NaF treatment.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
G. Rey, F. Babbe, T.P. Weiss, H. Elanzeery, M. Melchiorre, N. Valle, B. El Adib, S. Siebentritt,