Article ID Journal Published Year Pages File Type
5465941 Thin Solid Films 2017 6 Pages PDF
Abstract
The influence of the duration of the KCN etching step on the efficiency of Cu2ZnSnSe4 (CZTSe) solar cells and Post deposition annealing (PDA) has been explored. CZTSe thin film absorbers prepared by selenization at 450 °C were etched by 5 wt% KCN/KOH from 30s up to 360 s before solar cell processing. KCN etching times above 120 s resulted in poor efficiencies. The fill factor (FF) and short circuit current density (Jsc) of these devices were affected severely. After annealing the solar cells at 200 °C in N2 atmosphere the best devices degraded and poor devices improved. Combined physical and optoelectronic characterization of the solar cells showed that PDA modifies the bulk defect density and also surface composition which reflects in the solar cell performance.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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