Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5465952 | Thin Solid Films | 2017 | 4 Pages |
Abstract
We demonstrate that a simple and low-cost industrial sputter process can be used to substitute the InxSy:Na buffer and intrinsic ZnO layer with a single film of Zn(O,S). Cu(In,Ga)(Se,S)2 (CIGS) modules with an aperture area of 667Â cm2 and efficiencies up to 15.6% were prepared using a sputtered Zn(O,S) buffer layer. In comparison with our InxSy:Na reference, Zn(O,S) modules exhibit a superior short-circuit current which is overcompensated by a loss in the open-circuit voltage. The quality of the Zn(O,S)/CIGS interface, as judged from saturation current density and ideality factor, is close to that of the InxSy:Na reference. Electroluminescence images demonstrate a low and uniform recombination across the active module area. In first experiments, damp heat tests reveal a degradation in conversion efficiency of 4-6% relative. Hence, if the interface properties can be improved by further process optimization, the sputtered Zn(O,S) buffer is a promising candidate to increase the efficiency and reduce the costs of CIGS modules.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Michael Algasinger, Thomas Niesen, Thomas Dalibor, Alexander Steigert, Reiner Klenk, Iver Lauermann, Rutger Schlatmann, Martha Ch. Lux-Steiner, Jörg Palm,