Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466122 | Thin Solid Films | 2017 | 5 Pages |
Abstract
The crystallographic and electronic structures of (3Ã3) Bi-induced reconstructions of Si(553) surface are investigated with reflection high energy electron diffraction (RHEED), scanning tunneling microscopy and angle resolved photoelectron spectroscopy. The α and β (3Ã3) superstructures have been obtained at 1/3 and 1 monolayer of Bi, respectively. RHEED experiments indicate that α(3Ã3) is formed on wide (111) terraces separated by (331) facets while the β(3Ã3) phase stabilizes regular distribution of steps over entire Si(553) surface. In the latter case the double atomic height steps separate Bi-reconstructed (111) terraces of about 3 nm in width. Only one orientation of (3Ã3) reconstruction is formed as a consequence of broken three-fold symmetry. The electronic structures of both Bi-induced superstructures are similar to the corresponding ones obtained for a flat Si(111) surface.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. KopciuszyÅski, A. Mandziak, M. Dachniewicz, R. Zdyb,