Effect of Sn substitution on the energy storage properties of high (001)-oriented PbZrO3 thin films

Highly (001)-oriented pure PbZrO3 (PZO) films and Sn-substituted PZO films are deposited on (001)-LaNiO3 buffered SiO2/Si substrates by RF magnetron sputtering. Different Sn-substituted PbZrO3 films (PbZr1-xSnxO3, x = 0%, 3%, 5%, 10%) with orthorhombic anti-ferroelectric phase are fabricated. The effects of Sn substitution on structure and energy performance have been investigated in detail. The switching electric fields are enlarged and energy loss is lowered by Sn substitution. Recoverable energy density (Wr) of 14.8 ± 0.2 J/cm3 and energy efficiency (η) of 71.2 ± 0.5% at 900 kV/cm are obtained in 5% Sn-substituted PZO film (~ 360 nm). Furthermore, with thicker thickness of ~ 650 nm, Wr and η can be further improved. The Sn-substituted PZO film is believed to be an improved material for applications in energy storage systems and 5% Sn-substituted PZO film exhibits the highest Wr and η in this work.