Effect of growth conditions on the Al composition and optical properties of AlxGa1 −xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

The effect of growth conditions on the Al composition and optical properties of AlxGa1 −xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1 −xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1 −xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed.