Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466183 | Thin Solid Films | 2017 | 25 Pages |
Abstract
We investigated the effect of the incorporation of O atoms into BaSi2 films on their photoresponse properties. BaSi2 films with higher O concentration exhibited higher photoresponsivity. Time-of-flight secondary ion mass spectrometry measurements showed that the O atoms were uniformly distributed in the BaSi2 films, in contrast to our prediction that they would be mostly located around grain boundaries. First-principles calculations revealed that the O atoms occupy the interstitial sites known as the 4c sites rather than substitutional sites. Moreover, they do not create localized states within the forbidden band gap, which indicates that O atoms incorporated into BaSi2 are inactive.
Related Topics
Physical Sciences and Engineering
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Authors
Weijie Du, Ryota Takabe, Suguru Yachi, Kaoru Toko, Takashi Suemasu,