Pulsed laser chemical vapor deposition of a mixture of W, WO2, and WO3 from W(CO)6 at atmospheric pressure

Various analyses (X-ray diffraction (XRD), Auger electron spectroscopy (AES), and X-ray photoelectron spectroscopy (XPS)) identified α-W, WO2, and WO3 in the deposited W films at 1.78-6.67 W and at a scan rate of 4 μm/s, and their compositional and microstructural changes according to laser power. The loss of carbon (C) is attributable to the background oxygen. An increase in laser power increased the oxygen content, the WO3 to WO2 ratio, and the size of W grains. The resistivity of W films was closely related to the oxygen concentration and microstructure of W. The minimum resistivity of ~ 80 μΩ-cm was obtained at a power of from 3.56 to 4.0 W, at which the effect of the laser-induced grain growth on resistivity is maximized, accompanied by the laser-enhanced oxidation of W.