Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466292 | Thin Solid Films | 2017 | 5 Pages |
Abstract
In this work, a nano-cavity patterned sapphire substrate (nc-PSS) is fabricated by using a self-formed meshed Pt thin film on a c-plane sapphire substrate. The light output power of a GaN-based light emitting diode on the nc-PSS is 45% greater than that of a control light emitting diode that was prepared on a flat c-plane sapphire substrate (f-SS) wafer. The GaN-based light emitting diode that was prepared on the nc-PSS exhibited much less drooping than a GaN-based light-emitting diode that was prepared on a commercial semi-sphere patterned sapphire substrate (r-PSS), mainly because the voids that formed at the cavities at the GaN/nc-PSS interface buffered the stress in the GaN epi-layers that was imposed by the sapphire substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
S.W. Huang, C.C. Chang, H.Y. Lin, X.F. Li, Y.C. Lin, C.Y. Liu,