Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466424 | Thin Solid Films | 2017 | 4 Pages |
Abstract
Metal-Insulator-Semiconductor Schottky diodes were fabricated on SiC, as a potential use for particle detectors. Nickel was used as Schottky and back ohmic contacts. The dielectrics HfO2 and TiO2 were investigated as insulating layers and deposited by Atomic Layer Deposition, with thicknesses of 1, 2 and 4 nm. Current-Voltage curves were extracted from the diodes, varying the measurement temperature (297 K-373 K). Apparent and real Schottky Barrier Heights (SBHapparent and SBHreal), ideality factor η and insulating layer thicknesses were extracted from the I-V curves. Thicker insulating layers produce higher η and reduce the SBHreal value, for both dielectrics. An interfacial layer of silicon oxycarbide with thickness of 0.2 nm was estimated for all diodes. The SBHreal goes from 1.22 V to 0.66 V and from 1.26 V to 0.59 V, for thicknesses of 1 nm and 4 nm of HfO2 and TiO2, respectively. The reverse currents for all structures at 40 V of bias are of order of tens of pA at room temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
I.R. Kaufmann, A. Pick, M.B. Pereira, H. Boudinov,