Characterization of thin MnSi and MnGe layers prepared by reactive UV pulsed laser deposition

Reactive pulsed laser deposition is a technique suitable for producing homogenous thin layers of silicon or germanium with high concentration of embedded manganese atoms. Linear calibration of EDS (Energy Dispersive X-ray Spectroscopy) was utilized for an elemental analysis of thin layers. MnSi and MnGe (manganese-silicon and manganese-germanium) layers containing non-oxidized Mn were obtained for Mn molar concentration in the range from 15 to 50%. Electron diffraction showed an amorphous character of MnSi layers. MnGe layers contained two different types of nanoparticles incorporated inside an amorphous matrix. The layers were semiconducting with resistivities from 10− 3 to 10− 5 Ω m.