Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466492 | Thin Solid Films | 2016 | 5 Pages |
Abstract
In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time (Ï) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Po-Tsun Liu, Chih-Hsiang Chang, Guang-Ting Zheng, Chur-Shyang Fuh, Li-Feng Teng, Meng-Chyi Wu, Yao-Jen Lee,