| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5466496 | Thin Solid Films | 2016 | 24 Pages |
Abstract
Pr4O7-Pr2CuO4-δ (PCO) thin films were grown on Pt (Pt/Ti/SiO2/Si) substrates by pulsed laser deposition and their resistive switching behavior was investigated. The resistance ratio RH/L (Rhigh/Rlow) could be larger than 104, which can be maintained up to 50 cycles and 104 s without detectable degradation. The results show that the Pt/Pr4O7-PCO/Pt device possesses excellent endurance and retention properties. The physical mechanism of resistive switching in Pr4O7-PCO film could be ascribed to the forming and rupturing of conductive filaments via migration of oxygen vacancies.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J.T. Yin, X.S Liu, L. Wei, Y.F. Yin, W.F. Zhang,