| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5466560 | Thin Solid Films | 2016 | 5 Pages |
Abstract
Anomalous magnetic properties of C-axis-oriented Mn-implanted InN thin films on GaN/sapphire substrates are reported. X-ray diffraction analysis revealed Mn-implanted InN films of a high-quality crystal phase with wurtzite structure. All samples show n-type conductivity by Hall measurements. The un-implanted InN/GaN/Al2O3 sample with a carrier concentration of 1.6 Ã 1021 cmâ 3 (n2D = 8 Ã 1016 cmâ 2) exhibits increasing magnetization with decreasing temperature and did not appear superconductive above 1.8 K. After Mn-ion implantation, the appearance of the Meissner effect with superconducting onset temperature near 2.4 K was observed. The superconducting volume fraction Ï is near 36% at 2.2 K. Moreover, type-II behavior was further characterized by field-dependent magnetization measurement.
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Authors
P.H. Chang, H.C. Chen, J.W. Lin, M.X. Lai, S.Y. Hung, M.J. Lee,