Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5466581 | Thin Solid Films | 2016 | 6 Pages |
Abstract
Al2O3 thin films with thickness between 2 and 100 nm were synthetized at 250 °C by thermal atomic layer deposition on silicon substrates. Characterizations of as-deposited and annealed layers were carried out using ellipsometry, X-ray reflectivity, and X-ray photoelectron spectroscopy. A silicon-rich SiOx layer at the interface between Si and Al2O3 was introduced in the optical models to fit the experimental data. Surface passivation performances of Al2O3 layers deposited on n-type float-zone monocrystalline silicon were investigated as a function of thickness and post-deposition annealing conditions. Surface recombination velocity around 2 cm.s â 1 was measured after the activation of the negative charges at the Si/Al2O3 interface under optimized annealing at 400 °C for 10 min. The evolution of the interface layer and of the material properties with the thermal treatment was studied.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Corina Barbos, Danièle Blanc-Pelissier, Alain Fave, Claude Botella, Philippe Regreny, Geneviève Grenet, Elisabeth Blanquet, Alexandre Crisci, Mustapha Lemiti,