Development of single-event-effects analysis system at the IMP microbeam facility

Single-event-effects (SEEs) in integrated circuits (ICs) caused by galactic single ions are the major cause of anomalies for a spacecraft. The main strategies to decrease radiation failures for spacecraft are using SEEs less-sensitive devices and design radiation hardened ICs. High energy ion microbeam is one of the powerful tools to obtain spatial information of SEEs in ICs and to guide the radiation hardening design. The microbeam facility in the Institute of Modern Physics (IMP), Chinese Academy of Science (CAS) can meet both the liner energy transfer (LET) and ion range requirements for SEEs simulation experiments on ground. In order to study SEEs characteristics of ICs at this microbeam platform, a SEEs analysis system was developed. This system can target and irradiate ICs with single ions in micrometer-scale accuracy, meanwhile it acquires multi-channel SEE signals and maps the SEE sensitive regions online. A 4-Mbit NOR Flash memory was tested with this system using 2.2 GeV Kr ions, the radiation sensitive peripheral circuit regions for SEEs of 1 to 0 and 0 to 1 upset, multi-bit-upset and single event latchup have been obtained.