| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5467224 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 4 Pages |
Abstract
Inductively coupled plasma dry etching has been proceeded to form high breakdown-voltage mesa-structured GaN p-n junction diodes for power electronics applications. Occurrences of crystalline damages were inevitable during the etching by accelerated reactive ions. However; the damages were removed by thermal treatment at 850 °C, which lead low specific on-resistances (Ron < 1 mΩ cm2) and high breakdown voltages (VB > 4.2 kV) of the diode.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hiroshi Ohta, Fumimasa Horikiri, Tohru Nakamura, Tomoyoshi Mishima,