| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5467240 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 4 Pages |
Abstract
Tandem p-n junctions have been synthesized in ZnO nanorods (NRs) by implantation of 50 and 350Â keV O+ ions. Conducting-AFM measurements reveal the formation of Schottky like junctions between AFM tip and NRs. Photoluminescence measurements demonstrate the recovery of near band edge (NBE) emission upon annealing, while an additional dominant deep level emission is also observed. De-convolution analysis shows that these peaks originate from Oxygen interstitials (Oi) and may contribute to p-type conductivity in ZnO NRs. Such implanted NRs, may be suitable for green emissions and p-type conductivity.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Avanendra Singh, K. Senapati, D.P. Datta, R. Singh, T. Som, S. Bhunia, D. Kanjilal, Pratap K. Sahoo,