Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5467583 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 4 Pages |
Abstract
In this study, nitrogen (N) implantation was adopted to regulate the carrier concentration and the Hall mobility of amorphous Indium Gallium Zinc Oxide (a-IGZO) films. The Hall Effect measurement demonstrates that the increase of implantation fluence can decrease the carrier concentration of a-IGZO by three orders to 1016Â cmâ3, which attributes to the reduction of oxygen defects. The addition of nitrogen atoms can result in the increase of Hall mobility to 9.93Â cm2/VÂ s with the subsequent decrease to 6.49Â cm2/VÂ s, which reflects the reduction of the average potential barrier height (Ï0) to be 22.0Â meV with subsequent increase to 74.8Â meV in the modified percolation model. The results indicate that nitrogen can serve as an effective p-type dopants and oxygen defect suppressors. N-implantation with an appropriate fluence can effectively improve the Hall mobility and reduce the carrier concentration simultaneously.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
S.L. Zhan, M. Zhao, D.M. Zhuang, E.G. Fu, M.J. Cao, L. Guo, L.Q. Ouyang,