| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 5467599 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 6 Pages |
Abstract
Ion induced defect generation in graphene was analyzed using Raman spectroscopy. A single layer graphene membrane produced by chemical vapor deposition (CVD) on copper foil and then transferred on glass substrate was subjected to helium, carbon, nitrogen, argon and krypton ions bombardment at energies from the range 25Â keV to 100Â keV. A density of ion induced defects and theirs mean size were estimated by using Raman measurements. Increasing number of defects generated by ion with increase of ion mass and decrease of ion energy was observed. Dependence of ion defect efficiency (defects/ion) on ion mass end energy was proportional to nuclear stopping power simulated by SRIM. No correlation between ion defect efficiency and electronic stopping power was observed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
G. Gawlik, P. Ciepielewski, J. Jagielski, J. Baranowski,