Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5467603 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 6 Pages |
Abstract
The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is presented. This solution is a general one also covering the diffusion within the two limiting cases usually considered in solutions to the Fick equation, viz. a perfect sink at the surface and a perfectly reflecting surface plane at the surface. An analysis of the solutions for these two cases shows that at small diffusion times the main effect of annealing is a nearly symmetric broadening of the implanted profile. At the origin and for longer diffusion times the profile deviates significantly from Gaussian. A review is also given of past attempts to extract diffusion coefficients by fitting experimental data to approximate equations based on simplified initial profiles.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Johan B. Malherbe, P.A. Selyshchev, O.S. Odutemowo, C.C. Theron, E.G. Njoroge, D.F. Langa, T.T. Hlatshwayo,