Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5467720 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 4 Pages |
Abstract
The complex permittivity has been researched on silicon PIN diodes irradiated by 2150Â MeV heavy Kr ions in this article. The difference of complex permittivity spectra from 1 to 10^7Â Hz between irradiated and unirradiated were observed and discussed. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were measured at room temperature (300Â K) to study the change of electrical properties in diode after irradiation. Deep level transient spectroscopy (DLTS) was used to investigate damages caused by 2150Â MeV heavy Kr ions in diode. Two extra electron traps were observed, which were located at EC-0.31Â eV and EC-0.17Â eV. It indicated that new defects have been formed in PIN diode during irradiation. A comparison of the results illustrated that not only the carrier density but also the recombination of electron-hole pair have important influences on the properties of complex permittivity. These results offer a further indication of the mechanism about the complex permittivity property of semiconductor device, which could help to make the applications for the semiconductor device controlled by electric signals come true in the fields of optoelectronic integrated circuits, plasma antenna and so on.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Yun Li, Ping Su, Zhimei Yang, Yao Ma, Min Gong,