Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5467910 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2017 | 8 Pages |
Abstract
The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100Â MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0Â 0Â 0Â 2) and (1Â 0Â â1Â 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1Â ÃÂ 1011 and 5Â ÃÂ 1012Â ions/cm2 compared to the pristine QW structures.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
K. Prabakaran, R. Ramesh, M. Jayasakthi, S. Surender, S. Pradeep, M. Balaji, K. Asokan, K. Baskar,