Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468173 | Vacuum | 2017 | 22 Pages |
Abstract
In this study, copper indium gallium di-selenide (Cu(In, Ga)Se2, CIGS) thin films are prepared at different heating temperatures of Se effusion cell (Tsec) between 150 °C and 190 °C. The Tsec has a great influence on the deposition rate, chemical composition, morphology and grain structure of the CIGS absorbers. The CIGS thin film solar cell fabricated at 160 °C shows best efficiency of 11.6% in this series due to the relatively higher open circuit voltage (Voc) and fill factor (FF) as well as a high short circuit current (Jsc). By further optimizing device and material properties, the higher efficiency CIGS thin film solar cell of 17.2% is achieved.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
C. Zhang, H. Zhu, X. Liang, D. Zhou, Y. Guo, X. Niu, Z. Li, J. Chen, Y. Mai,