Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468188 | Vacuum | 2017 | 6 Pages |
Abstract
Sc-doped copper nitride (Cu3N) films were prepared by reactive magnetron sputtering equipment at room temperature with a preferred orientation of (111). XRD and XPS figures indicate that Sc atoms substitute for the Cu in the lattice. The much smaller grain size and the more compact surface can be discovered from the result of SEM after Sc doping. Sc-doped Cu3N films are more thermally stable than the pure Cu3N films when the Sc doping concentration is 1.3Â at.% with the sputtering power of 80Â W. The band gap of slight Sc doping sample (0.45Â at.%) is increased from 1.24 to 1.45Â eV. However, it drops gradually (from 1.45 to 1.16Â eV) with the increasing of Sc content.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Aiai Yu, Yuhui Ma, Aishi Chen, Yangyang Li, Yunhua Zhou, Zhongchao Wang, Jian Zhang, Liang Chu, Jianping Yang, Xing'ao Li,