Cuprous oxide (Cu2O) thin films prepared by reactive d.c. sputtering technique

Synthesis of cuprous oxide (Cu2O) by direct current (DC) reactive magnetron sputtering technique has been demonstrated. Ar:O2 gas ratios in the plasma and the substrate temperature were the decisive parameters for the formation of unblemished Cu2O polycrystalline films. The optimal deposition parameters are: Ar:O2 ∼90:10; Ts∼623 K and d.c. power ∼0.6 kV at 1.2 mA/cm2. Optical spectroscopy, photo luminescence, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and Raman measurements were carried out to characterize the films. Predominant p-type conductivity in the Cu2O films was confirmed from Hall measurement.