Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
5468207 | Vacuum | 2017 | 14 Pages |
Abstract
The crystallization behavior of Er-doped Ge2Sb2Te5 phase-change materials is investigated systemically for phase change memory application. It is observed that Er dopants can serve as a center for suppression of face-centered-cubic to hexagonal phase transition of Ge2Sb2Te5 films, leading to a one-step crystallization process. The crystallization temperature, 10-year data retention ability and crystalline resistance of Ge2Sb2Te5 films can be significantly increased. Raman spectra suggest that GeTe component is mainly responsible for the phase transition in Er-doped Ge2Sb2Te5 films.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Ting Gu, Jiaxing Wang, Huachi Liu, Zhenglai Wang, Yang Luo, Peng Liu, Juechen Zhong, Guoxiang Wang,